LT-GaAs Wafer (Low Temperature-Grown Galium Arsenide)
Diamater(mm) | Ф 50.8mm ± 1mm |
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Thickness | 1-2um or 2-3um |
Marco Defect Density | ≤ 5 cm-2 |
Resistivity(300K) | >10^8 Ohm-cm |
Carrier | <0.5 ps |
Dislocation Density | <1x10^6cm^-2 |
Useable Surface Area | ≥80% |
Polishing | Single side polished |
Substrate | GaAs substrate |