LT-GaAs Wafer (Low Temperature-Grown Galium Arsenide)
| Diamater(mm) | Ф 50.8mm ± 1mm |
|---|---|
| Thickness | 1-2um or 2-3um |
| Marco Defect Density | ≤ 5 cm-2 |
| Resistivity(300K) | >10^8 Ohm-cm |
| Carrier | ＜0.5 ps |
| Dislocation Density | <1x10^6cm^-2 |
| Useable Surface Area | ≥80% |
| Polishing | Single side polished |
| Substrate | GaAs substrate |