Gallium Arsenide Wafers for LD Applications

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Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diamter 2, 3 & 4 inch
Crystal Orientation (100)20/60/150 off (110)
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000 cm2/V.sec
Etch Pit Density <500/cm2
Surface Finish P/E or P/P