Gallium Arsenide Wafers for LD Applications
Conduction Type | SC/n-type |
---|---|
Growth Method | VGF |
Dopant | Silicon |
Wafer Diamter | 2, 3 & 4 inch |
Crystal Orientation | (100)20/60/150 off (110) |
Carrier Concentration | (0.4~2.5)E18/cm3 |
Resistivity at RT | (1.5~9)E-3 Ohm.cm |
Mobility | 1500~3000 cm2/V.sec |
Etch Pit Density | <500/cm2 |
Surface Finish | P/E or P/P |