Gallium Arsenide Wafers for LED Applications
| Conduction Type | SC/n-type |
|---|---|
| Growth Method | VGF |
| Dopant | Silicon (Zn Available) |
| Wafer Diamter | 2, 3 & 4 inch |
| Crystal Orientation | (100)20/60/150 off (110) |
| Carrier Concentration | (0.4~2.5)E18/cm3 |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm |
| Mobility | 1500~3000cm2/V.sec |
| Etch Pit Density | <5000/cm2 |
| Package | Single wafer container or cassette |